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  Datasheet File OCR Text:
 LED - Chip
Preliminary Radiation Red Type Point Source 10.04.2007 Technology AlInGaP/GaAs
ELC-645-29-50
rev. 03/07 Electrodes N (cathode) up
typ. dimensions (m)
O 150
typ. thickness
360 - 10
+ 20
R 30
170 (20) m cathode gold alloy, 1.5 m anode gold alloy, 0.5 m
PS-03
310
245 450
+ 20 -10
180
Maximum Ratings
Tamb = 25C, unless otherwise specified Test Parameter conditions Forward current (DC)
180
Optical and Electrical Characteristics
Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power* Luminous intensity* Peak wavelength Spectral bandwidth at 50% Switching time IF = 5 mA IR = 10 A IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA Symbol VF VR e IV p 0.5 tr , t f 4 100 5 200 7 645 26 40/30 Min Typ 1.85 Max 2.4 Unit V V W mcd nm nm ns
*Measured on bare chip on TO-18 header with EPIGAP equipment
R 5 15
Symbol IF
Min
Typ
Max 35
Unit mA
Labeling
Type ELC-645-29-50 Lot N IV(typ) [mcd] VF(typ) [V] Quantity
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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